Multiphysics Simulation of a PCB-Embedded-Package enclosing a GaN System on Chip – GaN HEMT Half Bridge with Integrated Gate Drivers

An innovative power module configuration ”PCB-Embedded-Package enclosing a GaN System on Chip – GaN HEMT Half Bridge with Integrated Gate Drivers” is being developed for the first time for a high-power power electronics application. To assess the innovative power module’s reliability and feasibility, it is initially being developed and analyzed in a multiphysics simulation environment and the findings are presented. The power module is ultimately optimized to have a reliable and feasible virtual model before hardware prototyping.